Imaging crystal orientations in multicrystalline silicon wafers via photoluminescence

Imaging crystal orientations in multicrystalline silicon wafers via photoluminescence

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Interstitial iron concentrations across multicrystalline silicon wafers via photoluminescence imaging

We present high-resolution images of the lateral distribution of interstitial iron across wafers from various positions along the length of a directionally solidifiedmulticrystalline silicon ingot. Iron images were taken on wafers in the as-cut state and also after two different phosphorus gettering steps performed at 8458C for 30min, one with an additional anneal at 6008C for 5 h (referred to ...

Quantifying carrier recombination at grain boundaries in multicrystalline silicon wafers through photoluminescence imaging

Estimation of solidification interface shapes in a boron–phosphorus compensated multicrystalline silicon ingot via photoluminescence imaging

This paper introduces a method for estimating the shape of the solidification front along the height of a directionally-solidified multicrystalline silicon ingot. The technique uses net dopant density images, obtained on wafers via photoluminescence imaging under surface limited conditions, after the impact of grain boundaries is eliminated through an image processing procedure. By modeling the...

Investigating dopant diffusion enhancement at grain boundaries in multicrystalline silicon wafers with micro-photoluminescence spectroscopy